Optoelectronic system

ABSTRACT

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a top surface, a bottom surface, a plurality of lateral surfaces arranged between the top surface and the bottom surface, and a first electrode arranged on the bottom surface; a wavelength converting material covering a plurality of lateral surfaces; and a reflecting layer, formed on the wavelength converting material which is arranged on the top surface.

REFERENCE TO RELATED APPLICATION

This application is a continuation application of Ser. No. 14/657,975,filed on Mar. 13, 2015, which is a continuation application of Ser. No.12/840,848, filed on Jul. 21, 2010, now U.S. Pat. No. 8,999,736, whichis a continuation-in-part application of Ser. No. 11/160,588, filed onJun. 29, 2005, which is a continuation-in-part application of Ser. No.10/604,245, filed on Jul. 4, 2003, now U.S. Pat. No. 6,987,287 andclaims the right of priority based on Taiwan application Ser. No.098124681, filed on Jul. 21, 2009, and Taiwan application Ser. No.098146171, filed on Dec. 30, 2009, and the content of which is herebyincorporated by reference.

TECHNICAL FIELD

The application relates to an optoelectronic system, and moreparticularly to an integrated optoelectronic system.

DESCRIPTION OF BACKGROUND ART

An optoelectronic element such as an LED (Light Emitting Diode) packageis usually made from a complicated bare-chip packaging process. Anoptoelectronic system can be further built by integrating the packagedoptoelectronic element with other electronic element such as capacitor,inductor, and/or non-electronic element.

Similar to the trend of small and slim commercial electronic product,the development of the optoelectronic element also enters into an era ofminiature package. One promising packaging design for semiconductor andoptoelectronic element is the Chip-Level Package (CLP).

SUMMARY OF THE DISCLOSURE

An optoelectronic system in accordance with embodiments of presentapplication is disclosed. The optoelectronic system includes anoptoelectronic element having a top surface, a bottom surface, aplurality of lateral surfaces arranged between the top surface and thebottom surface, and a first electrode arranged on the bottom surface; awavelength converting material covering a plurality of lateral surfaces;and a reflecting layer, formed on the wavelength converting materialwhich is arranged on the top surface.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a conventional LED package.

FIGS. 2A-2D illustrate steps of making an optoelectronic system inaccordance with an embodiment of the present invention.

FIG. 3 illustrates an optoelectronic system in accordance with anembodiment of the present invention.

FIG. 4 illustrates a system unit and a carrier in accordance with anembodiment of the present invention.

FIG. 5 illustrates a system unit and a sub-carrier in accordance with anembodiment of the present invention.

FIG. 6 illustrates electrical connections of system units in anoptoelectronic system in accordance with an embodiment of the presentinvention.

FIG. 7 illustrates electrical connections of system units in anoptoelectronic system in accordance with another embodiment of thepresent invention.

FIG. 8 illustrates electrical connections of system units in anoptoelectronic system in accordance with further embodiment of thepresent invention.

FIGS. 9A-9D illustrate steps of making an optoelectronic system inaccordance with another embodiment of the present invention.

FIG. 10 illustrates electrical connections of system units in anoptoelectronic system in accordance with an embodiment of the presentinvention.

FIG. 11 illustrates sub-groups of an optoelectronic system in accordancewith an embodiment of the present invention.

FIG. 12 illustrates electrical connection infrastructures of sub-groupsin accordance with an embodiment of the present invention.

FIG. 13 illustrates electrical connection infrastructure of sub-groupsin accordance with another embodiment of the present invention.

FIG. 14 illustrates the dimensions of one system unit in accordance withan embodiment of the present invention.

FIG. 15 illustrates a deployment of a wave conversion material in anoptoelectronic system in accordance with an embodiment of the presentinvention.

FIG. 16 illustrates a deployment of a wave conversion material in anoptoelectronic system in accordance with another embodiment of thepresent invention.

FIG. 17 illustrates a deployment of a wave conversion material in anoptoelectronic system in accordance with further embodiment of thepresent invention.

FIG. 18 illustrates a deployment of a wave conversion material in anoptoelectronic system in accordance with one embodiment of the presentinvention.

FIG. 19 illustrates a deployment of a wave conversion material in anoptoelectronic system in accordance with another embodiment of thepresent invention.

FIG. 20 illustrates deployments of wave conversion materials in anoptoelectronic system in accordance with further embodiment of thepresent invention.

FIG. 21 illustrates deployments of system units in an optoelectronicsystem in accordance with further embodiment of the present invention.

FIG. 22 illustrates deployments of optoelectronic elements or systemunits in an optoelectronic system in accordance with one embodiment ofthe present invention.

FIGS. 23A-23E illustrate steps of manufacturing a structure inaccordance with an embodiment of the present invention.

FIGS. 24A-24G illustrate steps of manufacturing a structure inaccordance with another embodiment of the present invention.

FIG. 24H shows a cross-sectional view of a chip in accordance withanother embodiment of the present invention.

FIGS. 25A and 25B illustrate structures in accordance with oneembodiment of the present invention.

FIG. 26 illustrates a structure in accordance with an embodiment of thepresent invention.

FIG. 27 illustrates a structure in accordance with another embodiment ofthe present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The embodiments are described hereinafter in accompany with drawings.

As shown in FIGS. 2A-2D, a method of making an optoelectronic system 100in accordance with an embodiment of the present invention is disclosedand includes steps of deploying two or more system units 30 on a carrier10; confining the spatial relation between the system units 30 byintroducing a material 40; separating the system units 30 from thecarrier 10; and establishing an electrical connection 60 between any twoof the system units. However, the sequence of performing the steps isnot limited to the aforementioned and can be freely adjusted accordingto the actual manufacturing environment or conditions.

The optoelectronic system 100 in accordance with one embodiment of thepresent invention includes two or more system units 30 which areconnected in a network of transmitting and/or converting luminous energyand electric energy. The system unit 30 is a part of the network andprovides luminous energy, electric energy, or both. For example, theoptoelectronic system 100 is capable of receiving signal and/or electricenergy to output luminous energy, or receiving luminous energy to outputelectric energy and/or signal. The optoelectronic system 100 can be usedin various fields such as illumination, display, image recognition,image reproduction, power supply, data storage, and machining.

Specifically, the optoelectronic system 100 is an integration,combination, and/or stack of the system units 30 which haveoptoelectronic function(s) and can be LED, photodiode, photoresistor,laser, infrared emitter, solar cell, and any combination thereof.Moreover, the optoelectronic system 100 can optionally include othernon-optoelectronic system unit 30, such as resister, capacitor,inductor, diode, and integrated circuit.

The carrier 10 is provided as a base for growing and/ore supporting thesystem unit 30. The candidates for carrier material include but notlimited to Ge, GaAs, InP, sapphire, SiC, Si, LiAlO₂, ZnO, GaN, AlN,metal, glass, composite, diamond, CVD diamond, and DLC (Diamond-LikeCarbon).

In one embodiment of the present invention, the whole or part of themain structure of one or more system units 30 is formed on the carrier10. Specifically, the carrier 10 is functioned as a ground structure ofthe system unit 30. For example, one or more system units 30 are formedon the carrier 10 by chemical deposition, physical deposition,electroplating, synthesis, and/or self-assembly. Moreover, other thanthe aforementioned methods, cutting, grinding, polishing,photo-lithography, etching, and/or thermal treatment can be optionallyintroduced to the steps of forming the system unit 30.

The system unit 30 in accordance with one embodiment of the presentinvention is an optoelectronic semiconductor structure which is made byepitaxially growing semiconductor layers on a growth substrate which isused as the carrier 10. Provided two or more system units 30 are formedon a common substrate, the adjoining system units 30 can be electricallyand/or physically separated by trench or insulating region. However, theelectrical layout of the system units 30 can be also formed by internalconnection, external connection, or both. Taiwan patents, No. 434917 andNo. 1249148 are pertinent to the same and issued to the assignee ofpresent application, and the content of which is hereby incorporated byreference.

Specifically, system unit 30 at least includes a first conductivitylayer, a conversion unit, and a second conductivity layer. At least twoparts of the first conductivity layer and the second conductivity layerare two individual single layer or two individual multiple layers(“multiple layers” means two or more than two layers) having differentelectrical properties, polarities, dopants or providing electrons andholes. If the first conductivity layer and the second conductivity layerare composed of semiconductor materials, whose electrical propertiescould be composed of any two of p-type, n-type, and i-type. Theconversion unit disposed between the first conductivity layer and thesecond conductivity layer is a region where the luminous energy and theelectrical energy can transfer or can be induced to transfer. The systemunit in which the electrical energy is transferred to the light energyis such as a light-emitting diode, a liquid crystal display, or anorganic light-emitting diode; the one that the light energy istransferred to the electrical energy is such as a solar cell, or anoptoelectronic diode.

The system unit 30 in accordance with another embodiment of the presentinvention is an LED (light-emitting diode). The light emission spectrumof the LED can be adjusted by changing the physical or chemicalarrangement of one semiconductor layer or more semiconductor layers. Thematerials such as the series of aluminum gallium indium phosphide(AlGaInP), the series of aluminum gallium indium nitride (AlGaInN), theseries of zinc oxide (ZnO) and so on are commonly used. The conversionunit such as single heterostructure (SH), double heterostructure (DH),double-side double heterostructure (DDH), or multi-quantum well (MQW)are usually formed. Besides, the wavelength of the emitting light couldalso be adjusted by changing the number of the pairs of the quantum wellin the MQW structure.

In one embodiment of the present invention, one or more system unites 30are built up before being mounted on the carrier 10. In other words, thecarrier 10 and the system unit 30 are independent from each other beforeestablishing connection. Specifically, the carrier 10 is used to supportthe system unit 30. For example, one or more system units 30 are mountedon the carrier 10 by means of glue, metal, pressure, and/or heat. Taiwanpatents, No. 311287, No. 456058, No. 474034 and No. 493286 are pertinentto the same and issued to the assignee of present application, and thecontent of which is hereby incorporated by reference. Moreover, duringestablishing the connection, the system unit 30 can automatically ormanually be placed on the carrier 10.

As shown in FIG. 3, the finished or semi-finished optoelectronic system100 can be optionally further connected to an external body. Theexternal body can be connected to one or two sides of the optoelectronicsystem 100. In several embodiments, the optoelectronic system 100 isconnected to the external body 10 a by one side of an electricalconnection 60; the optoelectronic system 100 is connected to theexternal body 10 b by another side opposite to the electrical connection60; the optoelectronic system 100 is connected to the external body 10 aby the side of the electrical connection 60 and to the external body 10b by the side opposite to the electrical connection 60. The connectionof the optoelectronic system 100 and the external body is not limited toabove-mentioned, but any surface of the optoelectronic system 100 can beconnected to a proper external body. The external body can be a specificunit, component, device, system, composition, and any combinationthereof. For example, the external body is a substrate formed bymaterial as those of the carrier 10, a circuit integration, anoptoelectronic system, an active element, a passive element, a circuitelement integration, and/or a fixture.

In one embodiment of the present invention, a layer or structure 20 isfurther formed between the system unit 30 and the carrier 10, as shownin FIG. 4. The layer or structure 20 is expected to develop a short-termor long-term connection between a part or whole of the system unit 30and the carrier 10. Herein, “short-term” is used to indicate a timepoint by or on the time the optoelectronic system 100 is made, deliveredor unloaded; “long-term” is used to indicate a time point after the timethe optoelectronic system 100 is made, delivered, or unloaded. In otherwords, the system unit 30 and the carrier 10 are not necessary toseparate from each other. Specifically, the layer or structure 20includes, for example, glue, alloy, semiconductor, adhesive tape,metallic single-layer, metallic multi-layer, jig, or any combinationthereof. In addition, the layer or structure 20 possess not only afunction to form a connection but also an optional function forreflecting, anti-reflecting, current-blocking, diffusion-blocking,stress-release, heat-conduction, and/or heat-insulation. For example,the layer or structure 20 includes a reflecting surface, an upperinter-layer positioned between the system unit 30 and the reflectingsurface, and a lower inter-layer positioned between the system unit 30and the reflecting surface. Except the reflecting function, one or bothof the upper inter-layer and the lower inter-layer may possess at leastone of the above-mentioned functions such as the function of connection,diffusion-blocking.

In another embodiment of the present invention, the system unit 30 andthe material 40 can be further connected to a sub-carrier 50, as shownin FIG. 5. The connection step may be executed before or after any stepof FIGS. 2A-2D. Preferably, the connection step is executed after thematerial 40 is introduced into the workflow, for example, after thesteps of FIG. 2B, FIG. 2C, or FIG. 2D. Provided the sub-carrier 50 isconnected to the system unit 30 and the material 40 after the step ofFIG. 2B, one may obtain a much reliable semi-finished structure to beused in following manufacturing steps. The sub-carrier 50 and the systemunit 30 can be connected with each other by using the method listed inthe description directed to FIG. 4, such as compression, heating, or anycombination thereof. Specifically, a connection layer 50 a is formedbetween the sub-carrier 50 and the system unit 30 to combine both.

In addition, the connection layer 50 a may possess not only the functionof connection but also an optional function for reflecting,anti-reflecting, current-blocking, diffusion-blocking, stress-release,heat-conduction, and/or heat-insulation. It is not necessary to add anadditional element to achieve such function(s), but by adjusting thecomposition, geometric shape, and/or process method of the sub-carrier50 can accomplish the same. For example, a reflecting, refracting,scattering, concentrating, collimating, and/or, shielding structure canbe formed on at least one light-exiting surface of the sub-carrier 50.The light-exiting surface is a surface contacting with the system unit30, the material 40, and/or the environmental medium. Specifically, thereflecting, refracting, scattering, concentrating, collimating, and/or,shielding structure are/is, for example, at least one of a mirror,regular concave and convex, irregular concave and convex, highrefraction index difference interface, photonic crystal, concave lens,convex lens, Fresnel lens, and opaque surface.

FIG. 6 illustrates the electrical connections of at least two systemunits 30 in the optoelectronic system 100 in accordance with oneembodiment of the present invention. The system unit 30 herein includestwo electrodes oriented in the same direction. Specifically, such systemunit 30 is, for example, a light-emitting diode, more specific, is alight-emitting diode formed on an insulator, such as sapphire. In FIG.6(a), two system units 30 are coupled together in an anode-cathodeconnection by wire 60 a. In FIG. 6(b), two system units 30 are coupledtogether in an anode-anode connection by wire 60 a. In FIG. 6(c), twosystem units 30 are coupled in a cathode-cathode connection by wire 60a.

FIG. 7 illustrates the electrical connections of at least two systemunits 30 in the optoelectronic system 100 in accordance with anotherembodiment of the present invention. The detail can be referred to thedescription of FIG. 6. However, in present embodiment, the electricalconnection between the system units 30 are built by an internalconnection 60 b which can be formed by depositing metallic material on aseparating zone 60 b′ formed on predetermined areas of the system units30.

FIG. 8 illustrates the electrical connections of at least two systemunits 30 in the optoelectronic system 100 in accordance with furtherembodiment of the present invention. In FIGS. 8(a) and 8(b), theelectrodes of the system units 30 are configured or extended to aboutthe same elevation. Two system units 30 shown in FIG. 8(a) are coupledin an anode-cathode connection by wire 60 a or internal connection 60 b.Two system units 30 shown in FIG. 8(b) are coupled together in any oneof three type connections as shown of the equivalent circuits by wire 60a or internal connection 60 b. In FIG. 8(c), two system units 30 shownin FIG. 8(b) are coupled to a circuit carrier 60 c as a part of anelectrical network.

As shown in FIGS. 9A-9D, a method of manufacturing the optoelectronicsystem 100 in accordance with another embodiment of the presentinvention is described as follows. Two or more system units 30 arefirstly deployed on a carrier 10 and arranged to form an electricalconnection 60 on one side thereof; confining the spatial relationbetween the system units 30 by introducing a material 40; separating thesystem units 30 from the carrier 10; and forming another one electricalconnection 60 on another side. However, the above-mentioned steps arenot limited to be performed or chosen in such sequence, and can bearranged according to the actual manufacturing environments orconditions. In addition, the electrical connections 60 on the two sidesof the two system units 30 are not limited the quantity or positionshown in the drawings, the user may arrange or modify them according tothe characteristic of the circuit. Moreover, under no obviouscontradiction, the other embodiments can be referred by or used inpresent embodiment.

FIG. 10 illustrates the electrical connections of at least two systemunits 30 in the optoelectronic system 100 in accordance with oneembodiment of the present invention. In FIG. 10(a), two system units 30,which are oriented in the same direction, are coupled together in aparallel connection by electrical connection 60. In FIG. 10(b), twosystem units 30, which are reversely-oriented, are coupled together inan anti-parallel connection by electrical connection 60. However, thesystem units 30, which are oriented in the same direction, can be alsocoupled together in an anti-parallel connection by an applicable layoutof the electrical connection 60. In FIG. 12(c), two system units 30 arecoupled to a circuit carrier 60 c as a part of an electrical network.

In one embodiment of the present invention, the system units 30, whichare confined in the material 40, can be further divided into sub-groupswith equal or unequal quantity, as shown in FIG. 11. However, thequantity and layout of the system units 30 are only illustrative, butnot to limit the application of the present invention. Without obviouscontradiction, the system elements disclosed in other embodiments can beintroduced into the present embodiment. Furthermore, the electricalconnection among the system units 30 of the sub-group can be referred tothe other relevant embodiments of the present invention. The method offorming the sub-group can be chemical means, physical means, or thecombination thereof. The chemical means can be etching. The physicalmeans can be mechanical cutting, polishing, laser cutting, water jet,thermal splitting, and/or ultrasonic vibration. The width of thematerial 40 between the neighboring system units 30 is preferablygreater than a working tolerance of the dividing method. For example,the width of the material 40 between two sub-groups is set to be greaterthan or about a blade thickness of a dicing saw used to cut the material40. In practice, the blade thickness of the dicing saw ranges from fewmicrometers to few millimeters, such as 20 μm˜2 mm. The detail of dicingsaw can be referred to the web sites of dicing saw providers.

FIG. 12 illustrates the electrical connection of the sub-group inaccordance with one embodiment of the present invention. However, thestructures of system units in the drawing are only illustrative, but notto limit embodiment of the present invention. Without obviouscontradiction, the system elements disclosed in other embodiments can beintroduced into the present embodiment. In FIG. 12(a), the electricalconnection 60 b bridges the separating zone 60 b′ and is settled on theelectrode 301 of the system unit 30 and the material 40. In FIG. 12(b),one end of the electrical connection 60 b is electrically connected tothe electrode 301 of the system unit 30 while the other end is directlysettled on the material 40. In FIG. 12(c), the electrical connection 60b is electrically connected to the system unit 30 without passing theelectrode 301, and is directly settled on the material 40. In FIG.12(d), the electrical connection 60 b is electrically connected to thesystem unit 30 without passing the electrode 301 and bridged on theseparating zone 60 b′ to settle on the material 40.

As shown in FIG. 13, the optoelectronic system 100 in accordance with anembodiment of the present invention includes sub-groups constructed intwo or more dimensions. The quantity and the connecting mode of thesystem units in each sub-group can be identical or different. Forexample, the sub-groups 100 a and 100 c are stacked on the sub-group 100b, wherein the sub-group 100 a includes four system units 30; thesub-group 100 b includes one system unit 30; the sub-group 100 cincludes two system units 30. The sub-groups can be electricallyconnected with each other by solder, silver glue, or other suitableconductive material. However, the sub-groups are not necessary toelectrically connect with each other, i.e. the sub-groups are simplyaggregated together. The structure or quantity of the system unit 30 inthe drawing is only illustrative, but not to limit to the embodiment ofthe present invention. Under no obvious contradiction, the system unitand the connecting mode of other embodiments can be introduced topresent embodiment.

FIG. 14(a) shows the width L2 of the sub-group and the width L1 of thesystem nit 30. L1/L2 is defined as X, and 0.05≦X≦1, preferably,0.1≦X≦0.2, 0.2≦X≦0.3, 0.3≦X≦0.4, 0.4≦X≦0.5, 0.5≦X≦0.6, 0.6≦X≦0.7,0.8≦X≦0.9, and/or 0.9≦X≦1. Specifically, L1/L2=260/600, or 580/1000.FIG. 14(b) illustrates a cross-sectional view of a sub-group inaccordance with an embodiment of the present invention, wherein thecontour of which is a trapezoid. The dimensional relation of thetrapezoid is listed as follows: L2>L1, L2>L3. One or more system units30 are positioned in the sub-group as shown in the drawing, however, theposition of the system unit relative to the edge of the material 40 isnot fixed, i.e. at least one edge of the system unit 30 can be arrangedto touch or reach beyond the edge of the material 40. For example, thesystem unit 30 can be arranged to approach, touch, or protrude the upperboundary 40 a and/or the lower boundary 40 b of the material 40.

As shown in FIG. 15, in one embodiment, the light-emitting system,sub-group, or system unit (herein collectively called “light source”) isintegrated with a wave conversion material. Specifically, the waveconversion material can be composed of a material 40 a, a material 40 b,or a combination of materials 40 a and 40 b. The material 40 a is, forexample, phosphor powder, dye, semiconductor, or ceramic powder. Thematerial 40 b is phosphor bulk, sintered bulk, ceramic bulk, organicglue, or inorganic glue. The material 40 a can be integrated with thematerial 40, material 40 b, or both in or after the above-mentionedmanufacturing process of the light source. For example, the phosphorpowder is mixed with the material 40 and then put on or filled in thesystem unit 30, or the wave conversion material is boded to, dropped,screen-printed, and/or deposited on the system unit 30. In FIG. 15(a),the material 40 a, material 40 b, or both of the materials 40 a and 40 bare arranged in a light-exiting direction of the light source,preferably, on the light source. In FIG. 15(b), the material 40 a ismixed with the material 40. In FIG. 15(c), the materials 40 a and 40 bare arranged as a combination of FIGS. 15(a) and 15(b). In FIG. 15(d),the material 40 a, material 40 b, or the combination of the materials 40a and 40 b are arranged in a light-exiting direction of the lightsource, but not contacting with the light source, preferably, contactingwith the material 40.

As shown in FIG. 16, the light-emitting system, sub-group, or the systemunit (herein collectively called “light source”) emits blue light, andis covered by the wave conversion material. The detail embodiment of thewave conversion material can be referred to the description of FIG. 15.In FIG. 16(a), the wave conversion material emits green light or yellowlight. In FIG. 16(b), the wave conversion material emits red light oryellow light. In FIG. 16(c), a region of the wave conversion materialemits yellow light; the other region thereof emits red light, whereinthe two regions do not overlap with each other. Preferably, the area ofyellow light is greater than that of red light. In FIG. 16(d), a regionof the wave conversion material emits yellow light; the other regionthereof emits red light, wherein the two regions overlap with eachother. Preferably, the region of yellow light is closer to the lightsource than the region of red light. Specifically, in the above cases,the color lights are generated from the corresponding phosphor powder orphosphor bulk which is excited by blue light.

As shown in FIG. 17(a), a part or a number of the system units in thelight-emitting system or the sub-group emit blue light, while the otherpart or a number of the system units emit red light. The material 40 ismixed with red or yellow phosphor, preferably, the quantity of the bluelight system unit is less than that of the red light system unit. Forexample, the quantity ratio of blue light system unit to the red lightsystem unit is N/1+N (N belongs to a positive integer). Or the powerratio of the blue light system unit to the red light system unit isN1/N2 (N1 and N2 N belong to positive integers). Preferably, the bluelight system unit has a greater power than the red light system unit.For example, N1/N2=3.0/1.0, 2.5/1.0, 2.0/1.0, 1.5/1.0, or 1.1/1.0. Asshown in FIG. 17(b), the system unit 30 of the light-emitting system,and/or the sub-group emits blue light, and the material 40 is mixed withred and yellow phosphor. Preferably, the red and yellow phosphor powdersare uniformly distributed in a predetermined space of the material 40.However, the powders may be also distributed in a random, gradient,dispersed, or staggered configuration.

As shown in FIG. 18(a), a part of the system units in the light-emittingsystem or the sub-group emit blue light, while the other part emit redlight. The materials 40 and 40 b are mixed with yellow phosphors havingidentical or different emitting spectrums. As shown in FIG. 18(b), theeffective or active system unit of the light-emitting system orsub-group emit blue light; while the materials 40 and 40 b are mixedwith red and yellow phosphor at a proper ratio. In FIG. 18(c), theeffective or active system unit of the light-emitting system orsub-group emit blue light, while the material 40 is mixed with yellowphosphor powder, and the material 40 is mixed with yellow phosphorpowder, the material 40 b is mixed with the red phosphor powder.

As shown in FIG. 19(a), a part of the system units in the light-emittingsystem or the sub-group emit blue light, while a part of the systemunits emit red light; a part of the system units emit green light. Asshown in FIG. 19(b), a part of the system units in the light-emittingsystem or the sub-group emit blue light, while the other part emit redlight. The material 40 is arranged on the two parts of the system unitsand mixed with green phosphor powder. As shown in FIG. 19(c), a part ofthe system units in the light-emitting system or the sub-group emit bluelight, while the other part emit red light. The material 40 is arrangedon the blue light system units and mixed with green phosphor powder. Asshown in FIG. 19(d), a part of the system units in the light-emittingsystem or the sub-group emit blue light, while the other part emit redlight. The material 40 is arranged on a part or local area of the bluelight system units and mixed with green phosphor powder.

As shown in FIGS. 20(a)-20(c), the effective or active system unit inthe light-emitting system or sub-group emit blue light. In FIG. 20(a),an area of the material 40 b is mixed with green phosphor powder;another area of the material 40 b is mixed with red phosphor powder.Preferably, the area of green phosphor powder is greater than that ofred phosphor powder. In FIG. 20(b), an area of the material 40 b ismixed with green phosphor powder; another area of the material 40 b ismixed with red phosphor powder. The two areas are overlapped with eachother. Preferably, the area emitting shorter wavelength is closer to thesystem unit than the area emitting longer wave length. In FIG. 20(c),the material 40 b is mixed with red and yellow phosphor powder. In FIG.20(d), the effective or active system units in the light-emitting systemor sub-group emit invisible radiation, such as UV light. The materials40 b respectively mixed with blue, green, and red phosphor powder arearranged on the system unit. The areas of the tree parts can be adjustedaccording to the efficiency, decay, and/or thickness of the phosphorpowders.

In above-mentioned or following embodiments, cool white light can beformed by mixture of the blue light and suitable yellow light; warmwhite light can be formed by the mixture of blue light and suitableyellow light and red light. The power ratio of blue light to red lightis about 2:15:1, for example, 2.5:1, 3:1, 3.5:1, 4:1, and 4.5:1. Thepower ratio of green light to yellow light is about 1:4. However, thescale and the arrangement of the materials 40 and 40 b in the drawingare only for illustration, but not to limit the embodiment of thepresent invention. In addition, the material 40, the material 40 b, orboth can further cover the system unit which the phosphor powder is notdisposed in the light path thereof. The material 40 and/or the material40 b may be integrated with phosphor bulk, sintered bulk, ceramic bulk,dye, or the combination thereof.

Furthermore, the optoelectronic system or sub-group includes not onlysystem unit 30 which emits light but also one or more ICs which can beused to control the a part or whole of the system unit 30 or as a relycircuit of a part or whole of the system unit 30, as shown in FIG.21(a). In addition to the ICs, the optoelectronic system or sub-groupcan be further connected to a system unit 30′. In one embodiment, thesystem unit 30′ is a power supply system, such as chemical battery,solar cell, and fuel cell. In another embodiment, the system unit 30′ isa transformer, a frequency conversion system, and a regulator.Specifically, the system unit 30′ is a SWMP (Switched Mode PowerSupply), and/or high frequency transformer.

FIGS. 22(a)˜22(f) illustrate the configurations of optoelectronic systemor sub-group. Wherein, the system unit 30 is not limited to one emitslight but can be one does not emit light.

As shown in FIG. 23A, a method of making the optoelectronic system inaccordance with one embodiment of the present invention is disclosed.Firstly, a carrier 10 (also called “temporary substrate” in presentembodiment) is provided. A layer or structure 20 (also called “firstconnecting layer”), which has adhesive upper and lower surfaces, isformed on the temporary substrate 10 by spin coating, vapor deposition,or printing. Two or more unpackaged system units 30 (also called“optoelectronic element”) are placed on and connected to the firstconnecting layer 20 by a pick & place system. A number of trenches 304are formed between the optoelectronic elements 30. The precision ofplacing the optoelectronic elements 30 is governed by the pick & placesystem, for example, the tolerance is not greater than 15 μm. Theoptoelectronic element is a light-emitting diode in the embodiment. Thestructure of the light-emitting diode includes a substrate 303, asemiconductor epitaxial layer 302 formed on the substrate 303, and atleast one electrode 301. The semiconductor epitaxial layer 302 includesa first conductivity semiconductor layer, an active layer, and a secondconductivity semiconductor layer. Furthermore, the substrate 303 can beoptionally removed during the manufacturing process in order to reducethe size of system. In one preferable embodiment, at least one electrode301 of the optoelectronic element 30 is connected to the firstconnecting layer 20. The optoelectronic elements 30 may emit lightshaving the same or different wave length ranged from UV to infrared.

The material of the temporary substrate 10 is can be silicone, glass,quartz, ceramic, alloy, or PCB. The material of the first connectinglayer 20 can be thermal release tape, UV release tape, chemical releasetape, heat resistant tape, and blue tape. The material of the substrate303 can be sapphire, SiC, ZnO, GaN, or Si, glass, quartz, or ceramic.The first conductivity semiconductor layer, the active layer, and thesecond conductivity semiconductor layer may include at least one elementselected from the group consisting of Ga, Al, In, As, P, N, and Si.

As shown in FIG. 23B, a material 40 (also called “adhesive glue”) isfurther provided to fill the trenches 304 between the optoelectronicelements 30, and cover the optoelectronic element 30 and the surface ofthe first connecting layer not covered by the optoelectronic element.The adhesive glue 40 is formed by spin coating, printing, or molding.The adhesive glue 40 may be a elastic material, such as silicone rubber,silicone resin, elastic PU, porous PU, acrylic rubber, or chip cuttingglue, such as blue tape or UV glue. In present embodiment, a polishprocess can be further introduced to smooth the surface of theoptoelectronic element 30 and prevent the overflow or sink of theadhesive glue 40.

As shown in FIG. 23C, a sub-carrier 50 (also called “permanentsubstrate”) is provided to bond with optoelectronic elements 30 wherethe adhesive glue 40 is applied. The bonding process can be a hotpressing process. In a preferable embodiment, the permanent substrate 50is directly connected to the substrate 303 of the optoelectronic element30. The material of the permanent substrate 50 can be chosen fromsilicone, glass, quartz, alloy, or PCB.

As shown in FIG. 23D, the temporary substrate 10, the first connectinglayer 20, and part of the adhesive glue 40 are removed by laserlift-off, heating, and/or dissolving the pattern film. The electrode 301of the optoelectronic elements 30 and part of the semiconductorepitaxial layer 302 are exposed.

As shown in FIG. 23E, the optoelectronic elements 30 are coupledtogether in a series connection by forming electrical connections 60(specifically, are wires in present embodiment) which are formed bylithography, and/or wire bonding. The material of wire 60 can be Au, Al,or alloy thereof The structure of the electrical connection 60 can be asingle layer or multi-layer. Finally, an optoelectronic system isformed.

FIGS. 24A-24G illustrate a workflow in accordance with anotherembodiment of the present invention. As shown in FIG. 24A, a temporarysubstrate 10 is provided. A first connecting layer 20, which hasadhesive upper and lower surfaces, is formed on the temporary substrate10 by spin coating, vapor deposition, or printing. Two or moreunpackaged optoelectronic element 30 are placed on and connected to thefirst connecting layer 20 by a pick & place system. A number of trenches304 are formed between the optoelectronic elements 30. The precision ofplacing the optoelectronic elements 30 is governed by the pick & placesystem, for example, the tolerance is not greater than 15 μm. Wherein,the optoelectronic element is such as a light-emitting diode including asubstrate 303, a semiconductor epitaxial layer 302 formed on thesubstrate 303, and at least one electrode 301. The semiconductorepitaxial layer 302 includes a first conductivity semiconductor layer,an active layer, and a second conductivity semiconductor layer. In onepreferable embodiment, at least one electrode 301 of the optoelectronicelement 30 is connected to the first connecting layer 20. Theoptoelectronic elements 30 may emit lights having the same or differentwave lengths ranged from UV to infrared.

The material of the temporary substrate 10 can be silicone, glass,quartz, ceramic, alloy, or PCB. The material of the first connectinglayer 20 can be thermal release tape, UV release tape, chemical releasetape, heat resistant tape, and blue tape. The material of the substrate303 can be sapphire, SiC, ZnO, GaN, or Si, glass, quartz, or ceramic.The first conductivity semiconductor layer, the active layer, and thesecond conductivity semiconductor layer may include at least one elementselected from the group consisting of Ga, Al, In, As, P, N, and Si.

In addition, as shown in FIG. 24A, a phosphor material P can be formedon the optoelectronic element 30. A uniform phosphor material is betterfor providing stable white light and reducing the divergence of thewhite lights from the optoelectronic elements 30. The phosphor materialP can be formed by spin coating, depositing, dropping, scraping, ormolding. In another embodiment, each of the optoelectronic elements 30is covered by different phosphor material. In further embodiment, theoptoelectronic elements 30 are optionally covered by different phosphormaterials to blend into various color light, i.e. not all of theoptoelectronic elements are covered by the phosphor material. Forexample, three of the optoelectronic elements, which are bluelight-emitting diodes, are grouped together. The first one is covered byred phosphor; the second one is covered by green phosphor; the third oneis not covered by any phosphor. The mixture of blue light, red light,and green light brings out white light.

As shown in FIG. 24B, an adhesive glue 40 is further provided to fillthe trenches 304 between the optoelectronic elements 30, and cover theoptoelectronic element 30 and the surface of the first connecting layer20 not covered by the optoelectronic element 30. The adhesive glue 40 isformed by spin coating, printing, or molding. The adhesive glue 40 maybe an elastic material, such as silicone rubber, silicone resin, elasticPU, porous PU, acrylic rubber, or chip cutting glue, such as blue tapeor UV glue. In present embodiment, a polish process can be furtherintroduced to smooth the surface of the optoelectronic element 30 andprevent the overflow or sink of the adhesive glue 40.

As shown in FIG. 24C, a permanent substrate 50 is provided to bond withoptoelectronic elements 30 where the adhesive glue 40 is applied. Thebonding process can be a hot pressing process. In a preferableembodiment, the permanent substrate 50 is directly connected to thesubstrate 303 of the optoelectronic element 30. The material of thepermanent substrate 50 can be chosen from silicone, glass, quartz,alloy, or PCB.

As shown in FIG. 24D, the temporary substrate 10, the first connectinglayer 20, and part of the adhesive glue 40 are removed by laserlift-off, heating, and/or dissolving the pattern film. The electrode 301of the optoelectronic elements 30 and part of the semiconductorepitaxial layer 302 are exposed.

As shown in FIG. 24E, a number of fan-out electrodes 305 are formed onelectrodes 301 of the optoelectronic element 30 by electroplating orvapor deposition. The area of the fan-out electrode 305 is greater thanthat of the electrode 301, and the positioning tolerance for followingpackaging process is therefore increased. The fan-out electrode 305,which has bigger area, is beneficial to conduct heat to the packagesubstrate such as metal or PCB. The material of the fan-out electrode305 is such as Au, Al, or alloy or multi metallic structure.

As shown in FIGS. 24F-24G, the optoelectronic elements 30 are dividedinto chips. To form an optoelectronic system, each chip can be boned toa sub-mount 600 by solder 601. The sub-mount 600 is such as a lead frameor large scale mounting substrate for facilitating the circuit layout ofthe optoelectronic system and heat dissipation.

Moreover, the embodiments of FIGS. 23 and 24 can be referred to orcombined with each other. For example, the optoelectronic element 30 ofFIG. 23 can be optionally covered by phosphor material, or the step ofFIG. 23D can be followed by the step of FIG. 24E in order to introducethe steps of making the fan-out electrode and dividing into chips.Similarly, the step of FIG. 24D can be followed by the step of FIG. 23Ein order to couple the optoelectronic elements by wires. In oneembodiment, the phosphor material can comprises two kinds of phosphorpowders, for example, red and yellow phosphor. The red and yellowphosphor powders are uniformly distributed in a random, gradient,dispersed, or staggered configuration.

As shown in FIG. 24H, similar to FIG. 24G, the optoelectronic element 30can be optionally covered by phosphor material. The phosphor materialcomprises a first phosphor layer (P1) and a second phosphor layer (P2)overlapping the first phosphor layer.

Furthermore, in another embodiment of the present invention as shown inFIG. 25A, a permanent substrate 50 is firstly provided to connect with asecond connecting layer 70 and then bonded to the optoelectronicelements 30 covered by the adhesive glue 40 by hot press process. Thematerial of the second connecting layer 70 is such as SiO_(x), SiN_(x),and silicone. In further embodiment of the present invention, which canbe introduced after FIG. 23B or FIG. 24B, as shown in FIG. 25B, thesecond connecting layer 70′ further includes channels 701 which isbeneficial to increase the heat dissipation and power wattage of theoptoelectronic system. The channels 701 are made by metallic material,such as Cu, Al, Ni, or the alloy thereof. However, the channels 701 andthe second connecting layer 70′ may be made by the same material, suchas sapphire, metal, and SiN.

In one embodiment of the present invention, which can be introducedafter FIG. 23B or FIG. 24B, as shown in FIG. 26, a permanent substrate50, which is connected with a first reflecting layer 80 by aninter-layer (not shown), is provided to connect with a second connectinglayer 70 and then bond to the optoelectronic elements 30 with theadhesive glue 40 by hot pressing process. The material of theinter-layer is such as SiO_(x), SiN_(x), and silicone. The firstreflecting layer 80 is made by metallic material, such as Ag, Al, or Pt,or a distributed Bragg reflector (DBR) which is composed of dielectricmaterials or semiconductors. In present embodiment, the use of the firstreflecting layer 80 is beneficial to increase the light extraction ofthe optoelectronic system.

In further embodiment of the present invention, which is introducedafter FIG. 23B or FIG. 24B, as shown in FIG. 27, a substrate 50′ havinga micro-pyramid array is provided to prevent side-emitting loss and/orpoor light extraction due to the closeness of the optoelectronicelements 30. The substrate 50′ with micro-pyramid array can be made byetching the semiconductor. The shape of the micro-pyramid 501 is such ascone, triangular pyramid, and tetra pyramid. The base angle of themicro-pyramid 501 is between 20˜70 degree. In another embodiment, asecond reflecting layer with a higher refraction index can be formed onthe surface of the substrate 50′. The substrate 50′ can be made bysilicone, glass, quartz, ceramic, alloy, or PCB. If the substrate 50′ ismade by a good conductive material, such as Cu, Al, Ceramic, and Si, thereliability of the optoelectronic element can be further improved. Thesubstrate 50′ is aligned with the optoelectronic elements 30 by hotpressing process. In present embodiment, the use of the substrate 50′with the micro-pyramid array is beneficial to increase the lightextraction by turning the side-emitting light toward the verticaldirection.

The foregoing description has been directed to the specific embodimentsof this invention. It will be apparent; however, that other alternativesand modifications may be made to the embodiments without escaping thespirit and scope of the invention.

What is claimed is:
 1. An optoelectronic system comprising: anoptoelectronic element, having a top surface, a bottom surface, aplurality of lateral surfaces arranged between the top surface and thebottom surface, and a first electrode arranged on the bottom surface; awavelength converting material, covering a plurality of lateralsurfaces; and a reflecting layer, formed on the wavelength convertingmaterial which is arranged on the top surface.
 2. The optoelectronicsystem of claim 1, further comprising an adhesive arranged between theoptoelectronic element and the reflecting layer.
 3. The optoelectronicsystem of claim 2, wherein the adhesive comprises silicone.
 4. Theoptoelectronic system of claim 1, wherein the wavelength convertingmaterial is arranged to surround the plurality of lateral surfaces. 5.The optoelectronic system of claim 1, wherein the wavelength convertingmaterial directly contacts the plurality of lateral surfaces.
 6. Theoptoelectronic system of claim 1, wherein the wavelength convertingmaterial exposes the first electrode.
 7. The optoelectronic system ofclaim 1, wherein the wavelength converting material comprises differentkinds of phosphors.
 8. The optoelectronic system of claim 1, wherein thereflecting layer is a sheet-like structure.
 9. The optoelectronic systemof claim 1, wherein the reflecting layer has a portion extending beyondat least one of the plurality of lateral surfaces.
 10. Theoptoelectronic system of claim 1, further comprising a fan-out electrodeelectrically formed on the first electrode and arranged on thewavelength converting material.
 11. The optoelectronic system of claim1, wherein the wavelength converting material has a sidewall throughwhich light emitted from the optoelectronic element is configured toescape from the optoelectronic system.
 12. The optoelectronic system ofclaim 1, wherein the wavelength converting material comprises a firstphosphor layer and a second phosphor layer overlapping the firstphosphor layer.
 13. The optoelectronic system of claim 2, wherein theadhesive and the reflecting layer are laterally coplanar with eachother.
 14. The optoelectronic system of claim 1, further comprising asubstrate arranged on the reflecting layer.
 15. The optoelectronicsystem of claim 1, wherein the optoelectronic element further comprisesa second electrode arranged on the bottom surface.
 16. Theoptoelectronic system of claim 1, further comprising a submount whichthe optoelectronic element is bonded to.